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基于薄膜 ScAlN 的CMOS 兼容光子集成电路
Scandium aluminum nitride (ScAlN) has recently emerged as an attractive material for integrated photonics due to its fav...
碳纳米管集成电路技术路线图及技术挑战
Abstract As the manufacturing process of silicon-based integrated circuits (ICs) approaches its physical limit, the quan...
基于 AlGaInAs_InP 的新型光子集成电路器件
AlGaInAs/InP material system's unique properties, such as a larger conduction band discontinuity (ΔEc = 0.72ΔEg) and a ...
集成电路中金属氧化物半导体的可靠性研究
Abstract: This paper is devoted to the study of CMOS IC parameter degradation during reliability testing. The paper pres...
五邑大学集成电路实验室建设项目招标文件
175861554133eaa8.pdf